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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA60H1317M1A
BLOCK DIAGRAM
2 3
RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation. FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) * Pout>60W, T>45% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 136-174MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 67 x 18 x 9.9 mm
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (FIN)
PACKAGE CODE: H2M
RoHS COMPLIANCE * RA60H1317M1A is a RoHS compliant product. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.
ORDERING INFORMATION: ORDER NUMBER RA60H1317M1A-101 SUPPLY FORM Antistatic tray, 10 modules/tray
RA60H1317M1A
MITSUBISHI ELECTRIC 1/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA60H1317M1A
MAXIMUM RATINGS (Tcase=+25C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0mW f=136-174MHz, ZG=ZL=50 RATING 17 5.5 100 80 -30 to +100 -40 to +110 UNIT V V mW W C C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo 3fo in IGG -- -- Frequency Range Output Power Total Efficiency 2
nd rd
CONDITIONS
MIN
136 60 45
TYP
MAX
174
UNIT
MHz W %
Harmonic
3 Harmonic Input VSWR Gate Current Stability Load VSWR Tolerance
VDD=12.5V VGG=5V Pin=50mW
-50 -50 3:1 1 No parasitic oscillation More than -60dBc No degradation or destroy
dBc dBc -- mA -- --
VDD=10.0-15.2V, Pin=25-70mW, Pout<70W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=60W (VGG control), Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H1317M1A
MITSUBISHI ELECTRIC 2/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA60H1317M1A
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
100
out (W)
2nd, 3 HARMONICS versus FREQUENCY
100 80 70 60 TOTAL EFFICIENCY T(%) 90 -20 -25 -30 HARMONICS (dBc) -35 -40 -45 -50 -55 -60 -65 -70 130 140 150 160 FREQUENCY f(MHz) 170 180
2nd 3rd V DD=12.5V V GG=5V Pin=50m W
rd
90 INPUT VSWR in (-) 80 70 60 50 40 30 20 10 0 130 140
in T
V DD=12.5V V GG=5V Pin=50m W Pout
OUTPUT POWER P
50 40 30 20 10 170 0 180
150 160 FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
70
out (dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
14 DRAIN CURRENT I DD (A) 12
out (dBm)
70 60 POWER GAIN Gp(dB) 50
Gp Pout
14 DRAIN CURRENT IDD(A) 12 10 8 6
IDD
f=155MHz V DD=12.5V V GG=5V
60 POWER GAIN Gp(dB) 50 40 30
IDD
Gp Pout
10 8 6
OUTPUT POWER P
OUTPUT POWER P
40 30 20 10 0 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)
20 10 0 -10 -5 0 5
f=136MHz V DD=12.5V V GG=5V
4 2 0
4 2 0
10
15
20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
70
out (dBm)
14 DRAIN CURRENT I DD (A) 12
Pout Gp
60 POWER GAIN Gp(dB) 50 40 30
IDD
10 8 6
f=174MHz V DD=12.5V V GG=5V
OUTPUT POWER P
20 10 0 -10 -5 0 5 10
4 2 0
15
20
INPUT POWER Pin(dBm)
RA60H1317M1A
MITSUBISHI ELECTRIC 3/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA60H1317M1A
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
100
out (W)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
20
out (W)
100 90 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD (V)
IDD
20 16 14 12 10 8 6 4 2 0 DRAIN CURRENT I DD (A)
f=155MHz PIN=50m W V GG=5V
90 80 70 60 50 40 30 20 10 0 2
Pout
16 14 12
IDD
DRAIN CURRENT I DD (A)
f=136MHz PIN=50m W V GG=5V
18
18
Pout
OUTPUT POWER P
10 8 6 4 2 0
4
6
8
10
12
14
DRAIN VOLTAGE VDD (V)
100
out (W)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
f=174MHz PIN=50m W V GG=5V
20 18 16 14 12 10 8 6 4 2 0 DRAIN CURRENT I DD (A)
90 80 70 60 50 40 30 20 10 0 2
Pout
OUTPUT POWER P
IDD
4
6
8
10
12
14
DRAIN VOLTAGE VDD (V)
RA60H1317M1A
MITSUBISHI ELECTRIC 4/9
OUTPUT POWER P
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA60H1317M1A
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
100
out (W)
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
20 DRAIN CURRENT I DD (A)
out (W)
100 90 80 70 60 50 40 30 20 10 0 3.5 4.0 4.5 5.0 5.5 GATE VOLTAGE VGG(V)
IDD
f=155MHz PIN=50m W V DD=12.5V
20 18
Pout
90 80 70 60 50 40 30 20 10 0 3.5
Pout
16 14 12 10 8 6 4 2 0
16 14 12 10 8 6 4 2 0
OUTPUT POWER P
IDD
4.0
4.5
5.0
5.5
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
100
out (W)
20 16 14 12
IDD
90 80 70 60 50 40 30 20 10 0 3.5
Pout
OUTPUT POWER P
10 8 6 4 2 0
4.0
4.5
5.0
5.5
GATE VOLTAGE VGG(V)
RA60H1317M1A
MITSUBISHI ELECTRIC 5/9
DRAIN CURRENT I DD (A)
f=174MHz PIN=50m W V DD=12.5V
18
OUTPUT POWER P
13 Mar 2008
DRAIN CURRENT I DD (A)
f=136MHz PIN=50m W V DD=12.5V
18
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA60H1317M1A
OUTLINE DRAWING (mm)
1 RF Input (Pin ) 2 Gate Voltage(VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
RA60H1317M1A
MITSUBISHI ELECTRIC 6/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA60H1317M1A
TEST BLOCK DIAGRAM
Power Meter 1 2
DUT
3 4
5
Spectrum Analyzer
Signal Generator
Attenuator
Preamplifier
Attenuator
Directional Coupler
ZG=50
ZL=50
Directional Coupler
Attenuator
Power Meter
C1
C2
+ DC Power Supply VGG C1, C2: 4700pF, 22uF in parallel
+ DC Power Supply VDD
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (FIN)
EQUIVALENT CIRCUIT
RA60H1317M1A
MITSUBISHI ELECTRIC 7/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA60H1317M1A
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pout Rth(ch-case) IDD @ T=45% VDD Pin Stage (W) (W) (V) (C/W) (A) st 1 0.05 5.0 2.1 0.8 12.5 2nd 5.0 60.0 0.5 9.8 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.8A - 5.0W + 0.05W) x 2.1C/W = Tcase + 10.6 C Tch2 = Tcase + (12.5V x 9.8A - 60W + 5.0W) x 0.5C/W = Tcase + 33.8 C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90C. For an ambient temperature Tair=60C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (60W/45% - 60W + 0.05W) = 0.41 C/W When mounting the module with the thermal resistance of 0.41 C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 40.6 C Tch2 = Tair + 63.8 C The 175C maximum rating for the channel temperature ensures application under derated conditions.
RA60H1317M1A
MITSUBISHI ELECTRIC 8/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA60H1317M1A
Output Power Control: By the gate voltage (VGG). Around VGG=4V, the output power and drain current increases substantially. Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. Load condition of Output terminal: This module suppose to use on the condition that load impedance is 50ohm. On the over load condition, this module run into the short mode in the worst case and the module involve the risk of burn out and smoking of parts including the substrate in the module.
Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.
RA60H1317M1A
MITSUBISHI ELECTRIC 9/9
13 Mar 2008

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